PartNumber | IDB10S60CATMA2 | IDB10S60C | IDB12E120ATMA1 |
Description | Schottky Diodes & Rectifiers SIC DIODES | DIODE SILICON 600V 10A D2PAK | DIODE GEN PURP 1.2KV 28A TO263-3 |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | Schottky Diodes & Rectifiers | - | Diodes, Rectifiers - Single |
Package / Case | TO-263-3 | - | - |
Technology | Si | - | - |
Packaging | Reel | - | Tape & Reel (TR) |
Brand | Infineon Technologies | - | - |
Product Type | Schottky Diodes & Rectifiers | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | Diodes & Rectifiers | - | - |
Part # Aliases | IDB10S60C SP001139894 | - | - |
Series | - | - | - |
Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-TO263-3-2 |
Speed | - | - | Fast Recovery = 200mA (Io) |
Diode Type | - | - | Standard |
Current Reverse Leakage Vr | - | - | 100μA @ 1200V |
Voltage Forward Vf Max If | - | - | 2.15V @ 12A |
Voltage DC Reverse Vr Max | - | - | 1200V (1.2kV) |
Current Average Rectified Io | - | - | 28A (DC) |
Reverse Recovery Time trr | - | - | 150ns |
Capacitance Vr F | - | - | - |
Operating Temperature Junction | - | - | -55°C ~ 150°C |