PartNumber | HUFA76413DK8T-F085 | HUFA76413DK8T | HUFA76413DK8T_F085 |
Description | MOSFET 60V Dual N-Channel Logic Level UltraFER | MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch | IGBT Transistors MOSFET 60V Dual N-Channel Logic Level UltraFER |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 5.1 A | 4.8 A | - |
Rds On Drain Source Resistance | 49 mOhms | 56 mOhms | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 2.5 W | - |
Configuration | Dual | Dual | Dual |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | HUF76413DK_F085 | HUFA76413DK8 | Automotive, AEC-Q101, UltraFET |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 3.9 mm | 3.9 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | HUFA76413DK8T_F085 | HUFA76413DK8T_NL | - |
Unit Weight | 0.008127 oz | 0.008127 oz | 0.006596 oz |
Vgs Gate Source Voltage | - | 16 V | - |
Channel Mode | - | Enhancement | - |
Type | - | MOSFET | - |
Fall Time | - | 27 ns | - |
Rise Time | - | 19 ns | - |
Typical Turn Off Delay Time | - | 45 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 2.5W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 620pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 5.1A |
Rds On Max Id Vgs | - | - | 49 mOhm @ 5.1A, 10V |
Vgs th Max Id | - | - | 3V @ 250μA |
Gate Charge Qg Vgs | - | - | 23nC @ 10V |
Pd Power Dissipation | - | - | 2.5 W |
Id Continuous Drain Current | - | - | 5.1 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 49 mOhms |