HN2A01FU-GR(T

HN2A01FU-GR(TE85LF vs HN2A01FU-GR(TE85L) vs HN2A01FU-GR(TE85LF)

 
PartNumberHN2A01FU-GR(TE85LFHN2A01FU-GR(TE85L)HN2A01FU-GR(TE85LF)
DescriptionBipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.1 V--
Maximum DC Collector Current- 150 mA--
Gain Bandwidth Product fT80 MHz--
SeriesHN2A01--
DC Current Gain hFE Max400--
PackagingReel--
BrandToshiba--
Continuous Collector Current- 150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
HN2A01FU-GR(TE85LF Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
HN2A01FU-GR(TE85LF Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
HN2A01FU-GR(TE85LFCT-ND Nuevo y original
HN2A01FU-GR(TE85LFDKR-ND Nuevo y original
HN2A01FU-GR(TE85L) Nuevo y original
HN2A01FU-GR(TE85LF) Nuevo y original
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