PartNumber | HN1C03FU-A(TE85L,F | HN1C03FU-A(TE85LFCT-ND | HN1C03FU |
Description | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz | ||
Manufacturer | Toshiba | - | TOSHIBA |
Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SMT-6 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 20 V | - | - |
Collector Base Voltage VCBO | 50 V | - | - |
Emitter Base Voltage VEBO | 20 V | - | - |
Collector Emitter Saturation Voltage | 0.042 V | - | - |
Maximum DC Collector Current | 300 mA | - | - |
Gain Bandwidth Product fT | 30 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 1200 | - | - |
Packaging | Reel | - | - |
Brand | Toshiba | - | - |
Continuous Collector Current | 300 mA | - | - |
DC Collector/Base Gain hfe Min | 200 | - | - |
Pd Power Dissipation | 200 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |