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GT10J312

GT10J312 vs GT10J312 10J312 vs GT10J312(Q)-ND

 
PartNumberGT10J312GT10J312 10J312GT10J312(Q)-ND
DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
ManufacturerTOSHIBA--
Product CategoryIGBTs - Single--
Fabricante Parte # Descripción RFQ
GT10J312 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
GT10J312 10J312 Nuevo y original
GT10J312SM Nuevo y original
GT10J312(Q)-ND Nuevo y original
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