 | |  | |
| PartNumber | GS881E32CD-200I | GS881E32CD-200 | GS881E32CD-200IV |
| Description | SRAM 2.5 or 3.3V 256K x 32 8M | SRAM 2.5 or 3.3V 256K x 32 8M | SRAM 1.8/2.5V 256K x 32 8M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| Packaging | Tray | Tray | Tray |
| Series | GS881E32CD | GS881E32CD | GS881E32CD |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 72 | 72 | 66 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Memory Size | - | - | 9 Mbit |
| Organization | - | - | 256 k x 32 |
| Access Time | - | - | 6.5 ns |
| Maximum Clock Frequency | - | - | 200 MHz |
| Interface Type | - | - | Parallel |
| Supply Voltage Max | - | - | 2.7 V |
| Supply Voltage Min | - | - | 1.7 V |
| Supply Current Max | - | - | 145 mA, 170 mA |
| Minimum Operating Temperature | - | - | - 40 C |
| Maximum Operating Temperature | - | - | + 85 C |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | BGA-165 |
| Memory Type | - | - | SDR |
| Type | - | - | DCD |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
GSI Technology |
GS881E32CD-250IV | SRAM 1.8/2.5V 256K x 32 8M | |
| GS881E32CD-200I | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CD-200 | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CD-250 | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CD-250I | SRAM 2.5 or 3.3V 256K x 32 8M | ||
| GS881E32CD-200V | SRAM 1.8/2.5V 256K x 32 8M | ||
| GS881E32CD-200IV | SRAM 1.8/2.5V 256K x 32 8M | ||
| GS881E32CD-250V | SRAM 1.8/2.5V 256K x 32 8M |