GS8342T11BGD-5

GS8342T11BGD-500 vs GS8342T11BGD-550 vs GS8342T11BGD-500I

 
PartNumberGS8342T11BGD-500GS8342T11BGD-550GS8342T11BGD-500I
DescriptionSRAM 1.8 or 1.5V 4M x 9 36MSRAM 1.8 or 1.5V 4M x 9 36MSRAM 1.8 or 1.5V 4M x 9 36M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size36 Mbit36 Mbit36 Mbit
Organization4 M x 94 M x 94 M x 9
Maximum Clock Frequency500 MHz550 MHz500 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max730 mA800 mA740 mA
Minimum Operating Temperature0 C0 C- 40 C
Maximum Operating Temperature+ 70 C+ 70 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeDDR-IIDDR-IIDDR-II
SeriesGS8342T11BGDGS8342T11BGDGS8342T11BGD
TypeSigmaQuad-II+SigmaQuad-II+SigmaQuad-II+
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity151515
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSigmaDDR-II+SigmaDDR-II+SigmaDDR-II+
Fabricante Parte # Descripción RFQ
GSI Technology
GSI Technology
GS8342T11BGD-500 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342T11BGD-550 SRAM 1.8 or 1.5V 4M x 9 36M
GS8342T11BGD-500I SRAM 1.8 or 1.5V 4M x 9 36M
GS8342T11BGD-550I SRAM 1.8 or 1.5V 4M x 9 36M
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