PartNumber | GS8321E32AD-200IV | GS8321E32AD-200I | GS8321E32AD-200 |
Description | SRAM 1.8/2.5V 1M x 32 32M | SRAM 2.5 or 3.3V 1M x 32 32M | SRAM 2.5 or 3.3V 1M x 32 32M |
Manufacturer | GSI Technology | GSI Technology | GSI Technology |
Product Category | SRAM | SRAM | SRAM |
Memory Size | 36 Mbit | 36 Mbit | 36 Mbit |
Organization | 1 M x 32 | 1 M x 32 | 1 M x 32 |
Access Time | 6.5 ns | 6.5 ns | 6.5 ns |
Maximum Clock Frequency | 200 MHz | 200 MHz | 200 MHz |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 2.7 V | 3.6 V | 3.6 V |
Supply Voltage Min | 1.7 V | 2.3 V | 2.3 V |
Supply Current Max | 235 mA, 270 mA | 225 mA, 260 mA | 205 mA, 240 mA |
Minimum Operating Temperature | - 40 C | - 40 C | 0 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 70 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | BGA-165 | BGA-165 | BGA-165 |
Packaging | Tray | Tray | Tray |
Memory Type | SDR | SDR | SDR |
Series | GS8321E32AD | GS8321E32AD | GS8321E32AD |
Type | Synchronous Burst | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through |
Brand | GSI Technology | GSI Technology | GSI Technology |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 18 | 18 | 18 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Tradename | SyncBurst | SyncBurst | SyncBurst |
RoHS | - | - | N |