 | | | |
| PartNumber | GS8321E18AGD-200 | GS8321E18AGD-200I | GS8321E18AGD-200IV |
| Description | SRAM 2.5 or 3.3V 2M x 18 36M | SRAM 2.5 or 3.3V 2M x 18 36M | SRAM 1.8/2.5V 2M x 18 36M |
| Manufacturer | GSI Technology | GSI Technology | GSI Technology |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 36 Mbit | 36 Mbit | 36 Mbit |
| Organization | 2 M x 18 | 2 M x 18 | 2 M x 18 |
| Access Time | 6.5 ns | 6.5 ns | 6.5 ns |
| Maximum Clock Frequency | 200 MHz | 200 MHz | 200 MHz |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 2.7 V |
| Supply Voltage Min | 2.3 V | 2.3 V | 1.7 V |
| Supply Current Max | 185 mA, 220 mA | 205 mA, 240 mA | 215 mA, 250 mA |
| Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 70 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | BGA-165 | BGA-165 | BGA-165 |
| Packaging | Tray | Tray | Tray |
| Memory Type | SDR | SDR | SDR |
| Series | GS8321E18AGD | GS8321E18AGD | GS8321E18AGD |
| Type | DCD Pipeline/Flow Through | DCD Pipeline/Flow Through | Synchronous Burst |
| Brand | GSI Technology | GSI Technology | GSI Technology |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 18 | 18 | 18 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Tradename | SyncBurst | SyncBurst | SyncBurst |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
GSI Technology |
GS8321E18AGD-200 | SRAM 2.5 or 3.3V 2M x 18 36M | |
| GS8321E18AGD-250 | SRAM 2.5 or 3.3V 2M x 18 36M | ||
| GS8321E18AGD-200I | SRAM 2.5 or 3.3V 2M x 18 36M | ||
| GS8321E18AGD-250I | SRAM 2.5 or 3.3V 2M x 18 36M | ||
| GS8321E18AGD-250V | SRAM 1.8/2.5V 2M x 18 36M | ||
| GS8321E18AGD-200V | SRAM 1.8/2.5V 2M x 18 36M | ||
| GS8321E18AGD-200IV | SRAM 1.8/2.5V 2M x 18 36M | ||
| GS8321E18AGD-250IV | SRAM 1.8/2.5V 2M x 18 36M |