GS8161Z18DGD-20

GS8161Z18DGD-200IV vs GS8161Z18DGD-200I vs GS8161Z18DGD-200

 
PartNumberGS8161Z18DGD-200IVGS8161Z18DGD-200IGS8161Z18DGD-200
DescriptionSRAM 1.8/2.5V 1M x 18 18MSRAM 2.5 or 3.3V 1M x 18 18MSRAM 2.5 or 3.3V 1M x 18 18M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size18 Mbit18 Mbit18 Mbit
Organization1 M x 181 M x 181 M x 18
Access Time6.5 ns6.5 ns6.5 ns
Maximum Clock Frequency200 MHz200 MHz200 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max2.7 V3.6 V3.6 V
Supply Voltage Min1.7 V2.3 V2.3 V
Supply Current Max210 mA, 215 mA215 mA, 215 mA195 mA, 195 mA
Minimum Operating Temperature- 40 C- 40 C0 C
Maximum Operating Temperature+ 85 C+ 85 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-165BGA-165BGA-165
PackagingTrayTrayTray
Memory TypeSDRSDRSDR
SeriesGS8161Z18DGDGS8161Z18DGDGS8161Z18DGD
TypeNBTNBTNBT
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity183636
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameNBT SRAMNBT SRAMNBT SRAM
Fabricante Parte # Descripción RFQ
GSI Technology
GSI Technology
GS8161Z18DGD-200V SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-200IV SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-200I SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-200 SRAM 2.5 or 3.3V 1M x 18 18M
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