GS8161E32DD

GS8161E32DD-150IV vs GS8161E32DD-150 vs GS8161E32DD-150I

 
PartNumberGS8161E32DD-150IVGS8161E32DD-150GS8161E32DD-150I
DescriptionSRAM 1.8/2.5V 512K x 32 16MSRAM 2.5 or 3.3V 512K x 32 16MSRAM 2.5 or 3.3V 512K x 32 16M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
Memory Size18 Mbit--
Organization512 k x 32--
Access Time7.5 ns--
Maximum Clock Frequency150 MHz--
Interface TypeParallel--
Supply Voltage Max2.7 V--
Supply Voltage Min1.7 V--
Supply Current Max195 mA, 210 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseBGA-165--
PackagingTrayTrayTray
Memory TypeSDR--
SeriesGS8161E32DDGS8161E32DDGS8161E32DD
TypeDCD Pipeline/Flow Through--
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity183636
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
Fabricante Parte # Descripción RFQ
GSI Technology
GSI Technology
GS8161E32DD-250 SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-250V SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-150IV SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-333V SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-150 SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-200 SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-200I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-250I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-333 SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-200V SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-150V SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-200IV SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-250IV SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-333IV SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DD-375 SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-333I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-375I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-400I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-150I SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-400 SRAM 2.5 or 3.3V 512K x 32 16M
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