PartNumber | GS8160E18DGT-333 | GS8160E18DGT-333IV | GS8160E18DGT-333I |
Description | SRAM 2.5 or 3.3V 1M x 18 18M | SRAM 1.8/2.5V 1M x 18 18M | SRAM 2.5 or 3.3V 1M x 18 18M |
Manufacturer | GSI Technology | GSI Technology | GSI Technology |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | Y | Y |
Memory Size | 18 Mbit | 18 Mbit | 18 Mbit |
Organization | 1 M x 18 | 1 M x 18 | 1 M x 18 |
Access Time | 4.5 ns | 5 ns | 4.5 ns |
Maximum Clock Frequency | 333 MHz | 333 MHz | 333 MHz |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 3.6 V | 2.7 V | 3.6 V |
Supply Voltage Min | 2.3 V | 1.7 V | 2.3 V |
Supply Current Max | 240 mA, 285 mA | 240 mA, 300 mA | 260 mA, 305 mA |
Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 70 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TQFP-100 | TQFP-100 | TQFP-100 |
Packaging | Tray | Tray | Tray |
Memory Type | SDR | SDR | SDR |
Series | GS8160E18DGT | GS8160E18DGT | GS8160E18DGT |
Type | Pipeline/Flow Through | DCD Synchronous Burst | Pipeline/Flow Through |
Brand | GSI Technology | GSI Technology | GSI Technology |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 36 | 18 | 36 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Tradename | SyncBurst | SyncBurst | SyncBurst |