FZT849T

FZT849TA vs FZT849TA / FZT849 vs FZT849TA , LP3982ILD-3.0

 
PartNumberFZT849TAFZT849TA / FZT849FZT849TA , LP3982ILD-3.0
DescriptionBipolar Transistors - BJT NPN High Ct Low Sat
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage350 mV--
Maximum DC Collector Current20 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT849--
DC Current Gain hFE Max100--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current7 A--
DC Collector/Base Gain hfe Min30 at 20 A, 2 V--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
FZT849TA Bipolar Transistors - BJT NPN High Ct Low Sat
FZT849TC Bipolar Transistors - BJT NPN High Ct Low Sat
FZT849TA Bipolar Transistors - BJT NPN High Ct Low Sat
FZT849TA / FZT849 Nuevo y original
FZT849TA , LP3982ILD-3.0 Nuevo y original
FZT849TA. Nuevo y original
Top