FZT115

FZT1151ATA vs FZT1151A vs FZT1151ACT

 
PartNumberFZT1151ATAFZT1151AFZT1151ACT
DescriptionBipolar Transistors - BJT PNP High Gain & CrntTRANSISTOR, PNP, 40V, 3A, 2.5W, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:40V, Transition Frequency ft:145MHz, Power Dissipation Pd:2.5W, DC Collector Current:3A, DC C
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSE--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 45 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 200 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT145 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT115--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 3 A--
Pd Power Dissipation2.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
FZT1151ATA Bipolar Transistors - BJT PNP High Gain & Crnt
FZT1151ATC Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1151ATA Bipolar Transistors - BJT PNP High Gain & Crnt
FZT1151A TRANSISTOR, PNP, 40V, 3A, 2.5W, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:40V, Transition Frequency ft:145MHz, Power Dissipation Pd:2.5W, DC Collector Current:3A, DC C
FZT1151ACT Nuevo y original
FZT1151ATA-79 Nuevo y original
FZT1151ATAPBF Nuevo y original
FZT1151TA Nuevo y original
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