PartNumber | FZ1600R12KE3 | FZ1600R12KF1 | FZ1600R12KE3NOSA1 |
Description | IGBT Modules 1200V 1600A SINGLE | Insulated Gate Bipolar Transistor, 2300A I(C), 1200V V(BR)CES, N-Channel | |
Manufacturer | Infineon | - | - |
Product Category | Module | - | - |
Mounting Style | Screw | - | - |
Package Case | IHM 130X140-7 | - | - |
Configuration | Dual Common Emitter Common Gate | - | - |
Pd Power Dissipation | 7.8 kW | - | - |
Maximum Operating Temperature | + 125 C | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 1.7 V | - | - |
Continuous Collector Current at 25 C | 1600 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Maximum Gate Emitter Voltage | +/- 20 V | - | - |