FS35R12KE3

FS35R12KE3G vs FS35R12KE3 vs FS35R12KE3GBOSA1

 
PartNumberFS35R12KE3GFS35R12KE3FS35R12KE3GBOSA1
DescriptionIGBT Modules 1200V 35A 3-PHASEMOD IGBT LOW PWR ECONO2-6
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT ModulesIGBTs - Modules-
RoHSN--
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationHexHex-
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V2.15 V-
Continuous Collector Current at 25 C55 A55 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation200 W--
Package / CaseEconoPACK 2B--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
PackagingTray--
Height17 mm--
Length93 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis MountScrew-
Maximum Gate Emitter Voltage20 V+/- 20 V-
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFS35R12KE3GBOSA1 SP000100412--
Unit Weight6.349313 oz--
Package Case-EconoPACK 2B-
Pd Power Dissipation-200 W-
Collector Emitter Voltage VCEO Max-1200 V-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FS35R12KE3G IGBT Modules 1200V 35A 3-PHASE
FS35R12KE3GBOSA1 MOD IGBT LOW PWR ECONO2-6
FS35R12KE3 Nuevo y original
FS35R12KE3G IGBT Modules 1200V 35A 3-PHASE
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