 | | |
| PartNumber | FQU5N50CTU-WS | FQU5N50CTU |
| Description | MOSFET 500V,4.0A NCH MOSFET | MOSFET 500V N-Channel Adv Q-FET C-Series |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 4 A | 4 A |
| Rds On Drain Source Resistance | 1.4 Ohms | 1.4 Ohms |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Height | 6.3 mm | 6.3 mm |
| Length | 6.8 mm | 6.8 mm |
| Series | FQU5N50C | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 2.5 mm | 2.5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 5040 | 70 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | FQU5N50CTU_WS | FQU5N50CTU_NL |
| Unit Weight | 0.012102 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 30 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2.5 W |
| Channel Mode | - | Enhancement |
| Type | - | MOSFET |
| Forward Transconductance Min | - | 5.2 S |
| Fall Time | - | 48 ns |
| Rise Time | - | 46 ns |
| Typical Turn Off Delay Time | - | 50 ns |
| Typical Turn On Delay Time | - | 12 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQU5N50CTU-WS | MOSFET 500V,4.0A NCH MOSFET | |
| FQU5N50CTU | MOSFET 500V N-Channel Adv Q-FET C-Series | ||
ON Semiconductor |
FQU5N50CTU | MOSFET N-CH 500V 4A IPAK | |
| FQU5N50CTU-WS | MOSFET N-CH 500V 4A | ||
| FQU5N50CTU_WS | RF Bipolar Transistors MOSFET 500V,4.0A NCH MOSFET |