FQU2N50B

FQU2N50BTU-WS vs FQU2N50BTU vs FQU2N50B

 
PartNumberFQU2N50BTU-WSFQU2N50BTUFQU2N50B
DescriptionMOSFET Power MOSFETMOSFET Power MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current1.6 A1.6 A-
Rds On Drain Source Resistance5.3 Ohms5.3 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height6.3 mm6.3 mm-
Length6.8 mm6.8 mm-
SeriesFQU2N50B--
Transistor Type1 N-Channel1 N-Channel-
Width2.5 mm2.5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time20 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity504070-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesFQU2N50BTU_WS--
Unit Weight0.012102 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-1.3 S-
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQU2N50BTU-WS MOSFET Power MOSFET
FQU2N50BTU MOSFET Power MOSFET
FQU2N50B Nuevo y original
FQU2N50BTU_WS IGBT Transistors MOSFET Power MOSFET
ON Semiconductor
ON Semiconductor
FQU2N50BTU MOSFET N-CH 500V 1.6A IPAK
FQU2N50BTU-WS MOSFET N-CH 500V 1.6A IPAK
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