 |  | | |
| PartNumber | FQPF630 | FQPF630(IRFS630) | FQPF634 |
| Description | MOSFET 200V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 6.3 A | - | - |
| Rds On Drain Source Resistance | 400 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.07 mm | - | - |
| Length | 10.36 mm | - | - |
| Series | FQPF630 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 4.2 S | - | - |
| Fall Time | 64 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 75 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 47 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Part # Aliases | FQPF630_NL | - | - |
| Unit Weight | 0.080072 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF630 | MOSFET 200V N-Channel QFET | |
ON Semiconductor |
FQPF630 | MOSFET N-CH 200V 6.3A TO-220F | |
| FQPF630(IRFS630) | Nuevo y original | ||
| FQPF634 | Nuevo y original |