FQPF2N60C

FQPF2N60C vs FQPF2N60C,2N60C, vs FQPF2N60C,F2N60C,

 
PartNumberFQPF2N60CFQPF2N60C,2N60C,FQPF2N60C,F2N60C,
DescriptionMOSFET 600V N-Channel Advance Q-FET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance4.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation23 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFQPF2N60C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesFQPF2N60C_NL--
Unit Weight0.080072 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQPF2N60C MOSFET 600V N-Channel Advance Q-FET
ON Semiconductor
ON Semiconductor
FQPF2N60C MOSFET N-CH 600V 2A TO-220F
FQPF2N60C,2N60C, Nuevo y original
FQPF2N60C,F2N60C, Nuevo y original
FQPF2N60C,FQP2N60C,2N60C Nuevo y original
FQPF2N60C/5N60C/8N60C Nuevo y original
FQPF2N60C/FQP2N60C Nuevo y original
FQPF2N60C/FQU2N60C/FQD2N Nuevo y original
FQPF2N60C/SSS2N60B Nuevo y original
FQPF2N60CTU Nuevo y original
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