FQP9N25 stock, FQP9N25, FQP9N25C


PartNumber	FQP9N25C	FQP9N25	FQP9N25C PB
Description	MOSFET 250V N-Channel Advance Q-FET	Power Field-Effect Transistor, 9.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer	ON Semiconductor	-	-
Product Category	MOSFET	-	-
RoHS	Y	-	-
Technology	Si	-	-
Mounting Style	Through Hole	-	-
Package / Case	TO-220-3	-	-
Number of Channels	1 Channel	-	-
Transistor Polarity	N-Channel	-	-
Vds Drain Source Breakdown Voltage	250 V	-	-
Id Continuous Drain Current	8.8 A	-	-
Rds On Drain Source Resistance	430 mOhms	-	-
Vgs Gate Source Voltage	30 V	-	-
Minimum Operating Temperature	- 55 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Pd Power Dissipation	74 W	-	-
Configuration	Single	-	-
Channel Mode	Enhancement	-	-
Packaging	Tube	-	-
Height	16.3 mm	-	-
Length	10.67 mm	-	-
Transistor Type	1 N-Channel	-	-
Type	MOSFET	-	-
Width	4.7 mm	-	-
Brand	ON Semiconductor / Fairchild	-	-
Forward Transconductance Min	7 S	-	-
Fall Time	65 ns	-	-
Product Type	MOSFET	-	-
Rise Time	85 ns	-	-
Factory Pack Quantity	50	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	90 ns	-	-
Typical Turn On Delay Time	15 ns	-	-
Unit Weight	0.050717 oz	-	-

Search Part Number : "FQP9N25", Match & Start with "FQP9N25" - Total : 8

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	FQP9N25C	MOSFET 250V N-Channel Advance Q-FET
	FQP9N25	Power Field-Effect Transistor, 9.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	FQP9N25C PB	Nuevo y original
	FQP9N25C,9N25,	Nuevo y original
	FQP9N25C,9N25C,	Nuevo y original
	FQP9N25C,9N25C,9N25	Nuevo y original
ON Semiconductor	FQP9N25C	MOSFET N-CH 250V 8.8A TO-220
ON Semiconductor	FQP9N25CTSTU	MOSFET N-CH 250V 8.8A TO-220

FQP9N25