 |  | | |
| PartNumber | FQP55N10 | FQP55N10,55N10 | FQP55N10,55N10, |
| Description | MOSFET 100V N-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 55 A | - | - |
| Rds On Drain Source Resistance | 26 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 155 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP55N10 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 140 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 250 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | FQP55N10_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP55N10 | MOSFET 100V N-Channel QFET | |
| FQP55N10,55N10 | Nuevo y original | ||
| FQP55N10,55N10, | Nuevo y original | ||
| FQP55N10,P55N10, | Nuevo y original | ||
| FQP55N10X | Nuevo y original | ||
ON Semiconductor |
FQP55N10 | Darlington Transistors MOSFET 100V N-Channel QFET |