FQP4N6

FQP4N60 vs FQP4N60B vs FQP4N60C SMK0460P

 
PartNumberFQP4N60FQP4N60BFQP4N60C SMK0460P
DescriptionMOSFET 600V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current4.4 A--
Rds On Drain Source Resistance2.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation106 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4 S--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesFQP4N60_NL--
Unit Weight0.050717 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP4N60 MOSFET 600V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQP4N60 MOSFET N-CH 600V 4.4A TO-220
FQP4N60B Nuevo y original
FQP4N60C SMK0460P Nuevo y original
FQP4N60C,4N60C, Nuevo y original
FQP4N60C,FQP4N60,P4N60, Nuevo y original
FQP4N60C,FQPF4N60C,4N60, Nuevo y original
FQP4N60C/FQPF4N60C Nuevo y original
FQP4N65C Nuevo y original
FQP4N60C Nuevo y original
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