FQP3N5

FQP3N50C-F080 vs FQP3N50C vs FQP3N50C_F080

 
PartNumberFQP3N50C-F080FQP3N50CFQP3N50C_F080
DescriptionMOSFET CFET 3A / 500VMOSFET N-CH/400V/ .5A/3.4OHMTrans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB Rail
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation62 W--
ConfigurationSingle-1 N-Channel
Channel ModeEnhancement-Enhancement
PackagingTube-Tube
Height16.3 mm--
Length10.67 mm--
SeriesFQP3N50C--
Transistor Type1 N-Channel-1 N-Channel
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.5 S--
Fall Time25 ns-25 ns
Product TypeMOSFET--
Rise Time25 ns-25 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns-35 ns
Typical Turn On Delay Time10 ns-10 ns
Part # AliasesFQP3N50C_F080--
Unit Weight0.063493 oz-0.063493 oz
Package Case--TO-220-3
Pd Power Dissipation--62 W
Vgs Gate Source Voltage--+/- 30 V
Id Continuous Drain Current--3 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--2.5 Ohms
Qg Gate Charge--10 nC
Forward Transconductance Min--1.5 S
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP3N50C-F080 MOSFET CFET 3A / 500V
FQP3N50C MOSFET N-CH/400V/ .5A/3.4OHM
FQP3N50C_F080 Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB Rail
ON Semiconductor
ON Semiconductor
FQP3N50C-F080 MOSFET N-CH 500V 1.8A TO220-3
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