PartNumber | FQD12P10TF | FQD12P10 | FQD12P10TF_NB82105 |
Description | MOSFET 100V P-Channel QFET | ||
Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | E | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 9.4 A | - | - |
Rds On Drain Source Resistance | 290 mOhms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | Reel |
Height | 2.39 mm | - | - |
Length | 6.73 mm | - | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Type | MOSFET | - | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 6.3 S | - | - |
Fall Time | 60 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 160 ns | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 35 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Id Continuous Drain Current | - | - | - 9.4 A |
Vds Drain Source Breakdown Voltage | - | - | - 100 V |
Rds On Drain Source Resistance | - | - | 290 mOhms |