 | | |
| PartNumber | FQB3P20TM | FQB3P50TM |
| Description | MOSFET 200V P-Channel QFET | MOSFET 500V P-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 500 V |
| Id Continuous Drain Current | 2.8 A | 2.7 A |
| Rds On Drain Source Resistance | 2.7 Ohms | 4.9 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.13 W | 3.13 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 1.23 S | 2.35 S |
| Fall Time | 25 ns | 45 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | 56 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 35 ns |
| Typical Turn On Delay Time | 8.5 ns | 12 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB3P20TM | MOSFET 200V P-Channel QFET | |
| FQB3P50TM | MOSFET 500V P-Channel QFET | ||
ON Semiconductor |
FQB3P20TM | MOSFET P-CH 200V 2.8A D2PAK | |
| FQB3P50TM | MOSFET P-CH 500V 2.7A D2PAK | ||
| FQB3P20TM-NL | Nuevo y original | ||
| FQB3P20TMFSC | Nuevo y original | ||
| FQB3P25TM | Nuevo y original |