 | | | |
| PartNumber | FQB30N06 | FQB30N06L | FQB30N06LT |
| Description | |||
| Manufacturer | - | - | FAIRCHILD |
| Product Category | - | - | FETs - Single |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.046296 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.75 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 110 ns |
| Rise Time | - | - | 210 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 32 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 35 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 60 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Forward Transconductance Min | - | - | 24 S |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB30N06LTM | MOSFET 60V N-Channel QFET Logic Level | |
| FQB30N06TM | MOSFET 60V N-Channel QFET Logic Level | ||
| FQB30N06 | Nuevo y original | ||
| FQB30N06L | Nuevo y original | ||
| FQB30N06LT | Nuevo y original | ||
| FQB30N06LTM-NL | Nuevo y original | ||
| FQB30N06T | Nuevo y original | ||
| FQB30N06TM-FQB30N06 | Nuevo y original | ||
| FQB30N06TM-NL | Nuevo y original | ||
ON Semiconductor |
FQB30N06LTM | MOSFET N-CH 60V 32A D2PAK | |
| FQB30N06TM | MOSFET N-CH 60V 30A D2PAK |