FQB2N6

FQB2N60TM vs FQB2N60 vs FQB2N60TM-NL

 
PartNumberFQB2N60TMFQB2N60FQB2N60TM-NL
DescriptionMOSFET 600V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance4.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.011640 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB2N60TM MOSFET 600V N-Channel QFET
FQB2N60 Nuevo y original
FQB2N60TM-NL Nuevo y original
ON Semiconductor
ON Semiconductor
FQB2N60TM MOSFET N-CH 600V 2.4A D2PAK
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