FQB13N5

FQB13N50CTM vs FQB13N50 vs FQB13N50C

 
PartNumberFQB13N50CTMFQB13N50FQB13N50C
DescriptionMOSFET 500V N-Channel Adv Q-FET C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance480 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation195 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeQFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min15 S--
Fall Time100 ns--
Product TypeMOSFET--
Rise Time100 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesFQB13N50CTM_NL--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB13N50CTM MOSFET 500V N-Channel Adv Q-FET C-Series
FQB13N50 Nuevo y original
FQB13N50C Nuevo y original
FQB13N50CTM-NL Nuevo y original
FQB13N50TM Nuevo y original
ON Semiconductor
ON Semiconductor
FQB13N50CTM MOSFET N-CH 500V 13A D2PAK
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