FQB12N60C

FQB12N60CTM vs FQB12N60C vs FQB12N60CTM-NL

 
PartNumberFQB12N60CTMFQB12N60CFQB12N60CTM-NL
DescriptionMOSFET 600V N-Channel Adv Q-FET C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance650 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeQFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min13 S--
Fall Time90 ns--
Product TypeMOSFET--
Rise Time85 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time155 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesFQB12N60CTM_NL--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB12N60CTM MOSFET 600V N-Channel Adv Q-FET C-Series
FQB12N60C Nuevo y original
FQB12N60CTM-NL Nuevo y original
ON Semiconductor
ON Semiconductor
FQB12N60CTM MOSFET N-CH 600V 12A D2PAK
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