OMO ElectronicOMO Electronic
Expand menu
0 Carro

FQB10N50CF

FQB10N50CFTM-WS vs FQB10N50CFTM vs FQB10N50CFTM_WS

 
PartNumberFQB10N50CFTM-WSFQB10N50CFTMFQB10N50CFTM_WS
DescriptionMOSFET 500V 10A N-ChannelIGBT Transistors MOSFET 500V 10A N-Channel
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance610 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation143 W--
ConfigurationSingle--
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height4.83 mm--
Length10.67 mm--
SeriesFQB10N50CFTM--
Transistor Type1 N-Channel-1 N-Channel
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time55 ns-55 ns
Product TypeMOSFET--
Rise Time47 ns-47 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time138 ns-138 ns
Typical Turn On Delay Time25 ns-25 ns
Part # AliasesFQB10N50CFTM_WS--
Unit Weight0.046296 oz-0.046296 oz
Package Case--TO-252-3
Pd Power Dissipation--143 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--610 mOhms
Qg Gate Charge--45 nC
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FQB10N50CFTM-WS MOSFET 500V 10A N-Channel
FQB10N50CFTM Nuevo y original
FQB10N50CFTM_WS IGBT Transistors MOSFET 500V 10A N-Channel
ON Semiconductor
ON Semiconductor 		FQB10N50CFTM-WS MOSFET N-CH 500V 10A DPAK
Top