FQA8N9

FQA8N90C-F109 vs FQA8N90C vs FQA8N90

 
PartNumberFQA8N90C-F109FQA8N90CFQA8N90
DescriptionMOSFET 900V N-ChannelMOSFET 900V N-Channel Q-FET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage900 V900 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance1.9 Ohms1.9 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation240 W240 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
SeriesFQA8N90C_F109--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time70 ns70 ns-
Product TypeMOSFETMOSFET-
Rise Time110 ns110 ns-
Factory Pack Quantity45030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time40 ns40 ns-
Part # AliasesFQA8N90C_F109FQA8N90C_NL-
Unit Weight0.225789 oz0.000198 oz-
Type-MOSFET-
Forward Transconductance Min-5.5 S-
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA8N90C-F109 MOSFET 900V N-Channel
FQA8N90C MOSFET 900V N-Channel Q-FET
FQA8N90 Nuevo y original
FQA8N90C_F109 900V N-CHANNEL MOSFET QFET&#17
ON Semiconductor
ON Semiconductor
FQA8N90C MOSFET N-CH 900V 8A TO-3P
FQA8N90C-F109 MOSFET N-CH 900V 8A TO-3P
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