 |  |  | |
| PartNumber | FPF2C110BI07AS2 | FPF2C8P2NL07A | FPF2C8P2BF12AS |
| Description | Discrete Semiconductor Modules High Power Module | IGBT Modules PIM F2 NPC 650V 50A | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Discrete Semiconductor Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Series | FPF2C110BI07AS2 | FPF2C8P2NL07A | - |
| Packaging | Tray | Tray | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | Discrete Semiconductor Modules | IGBT Modules | - |
| Factory Pack Quantity | 70 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | IGBTs | - |
| Unit Weight | 1.587328 oz | 1.587328 oz | - |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | 3-Phase | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |
| Collector Emitter Saturation Voltage | - | 2.13 V, 2.49 V | - |
| Continuous Collector Current at 25 C | - | 30 A, 50 A | - |
| Gate Emitter Leakage Current | - | 2 uA, 2 uA | - |
| Pd Power Dissipation | - | 135 W, 174 W | - |
| Package / Case | - | F2 | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | Through Hole | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Tradename | - | STEALTH | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FPF2C110BI07AS2 | Discrete Semiconductor Modules High Power Module | |
| FPF2C8P2NL07A | IGBT Modules PIM F2 NPC 650V 50A | ||
| FPF2C8P2BF12AS | Nuevo y original | ||
ON Semiconductor |
FPF2C8P2NL07A | IC LOAD SWITCH 650V 50A | |
| FPF2C110BI07AS2 | NON - ISOLATION SOLAR INVERTER ( |