FP50R0

FP50R06KE3 vs FP50R06W2E3 vs FP50R06KE3BOSA1

 
PartNumberFP50R06KE3FP50R06W2E3FP50R06KE3BOSA1
DescriptionIGBT Modules N-CH 600V 60AIGBT Modules IGBT 600V 50AIGBT MODULE VCES 600V 50A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSY--
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationArray 7IGBT-Inverter-
Collector Emitter Voltage VCEO Max600 V600 V-
Continuous Collector Current at 25 C60 A65 A-
Package / CaseEcono 2Module-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountSMD/SMT-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1015-
SubcategoryIGBTsIGBTs-
Part # AliasesFP50R06KE3BOSA1 SP000091922FP50R06W2E3BOMA1 SP000375909-
Unit Weight6.349313 oz1.375685 oz-
Collector Emitter Saturation Voltage-1.45 V-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-175 W-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FP50R06KE3 IGBT Modules N-CH 600V 60A
FP50R07N2E4_B11 IGBT Modules IGBT Module 50A 650V
FP50R06W2E3_B11 IGBT Modules IGBT 600V 50A
FP50R07N2E4 IGBT Modules IGBT Module 50A 650V
FP50R06W2E3 IGBT Modules IGBT 600V 50A
FP50R06KE3BOSA1 IGBT MODULE VCES 600V 50A
FP50R06W2E3B11BOMA1 IGBT MODULE VCES 600V 50A
FP50R07N2E4B11BOSA1 IGBT MODULE VCES 600V 50A
FP50R07N2E4BOSA1 IGBT MODULE VCES 600V 50A
FP50R07U1E4BPSA1 IGBT MODULE VCES 600V 50A
FP50R06W2E3BOMA1 IGBT MODULE 600V 450A
FP50R06KE3G IGBT Modules N-CH 600V 60A
FP50R06KE3_B13_ENG Nuevo y original
FP50R06W2E3ENG Nuevo y original
FP50R06W2E3_B11 IGBT Modules IGBT 600V 50A
FP50R07N2E4_B11 IGBT Modules IGBT Module 50A 650V
FP50R07N2E4 IGBT Modules IGBT Module 50A 650V
FP50R06KE3 IGBT Modules N-CH 600V 60A
FP50R06W2E3 IGBT Modules IGBT 600V 50A
FP50R07U1E4 IGBT Modules
FP50R06KE3GBOSA1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
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