FP10R06W

FP10R06W1E3 vs FP10R06W1E3B11BOMA1 vs FP10R06W1E3BOMA1

 
PartNumberFP10R06W1E3FP10R06W1E3B11BOMA1FP10R06W1E3BOMA1
DescriptionIGBT Modules N-CH 600V 16AIGBT MODULE VCES 600V 100AIGBT Power Module
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationArray 7--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C16 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation68 W--
Package / CaseEASY1B--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height12 mm--
Length62.8 mm--
Width33.8 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity24--
SubcategoryIGBTs--
Part # AliasesFP10R06W1E3BOMA1 SP000092044--
Unit Weight0.846575 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FP10R06W1E3_B11 IGBT Modules IGBT Module 10A 600V
FP10R06W1E3 IGBT Modules N-CH 600V 16A
FP10R06W1E3B11BOMA1 IGBT MODULE VCES 600V 100A
FP10R06W1E3BOMA1 IGBT Power Module
FP10R06W1E3_B11 IGBT Modules IGBT Module 10A 600V
FP10R06W1E3 IGBT Modules N-CH 600V 16A
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