FMMT555T

FMMT555TC vs FMMT555TA , 1SMA5938BT3 vs FMMT555TA

 
PartNumberFMMT555TCFMMT555TA , 1SMA5938BT3FMMT555TA
DescriptionBipolar Transistors - BJT PNP Medium PowerBipolar Transistors - BJT PNP High Voltage
ManufacturerDiodes Incorporated-SON/DIODES/ZETEX
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 150 V--
Collector Base Voltage VCBO- 160 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.3 V-- 0.35 V
Maximum DC Collector Current1 A-1 A
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesFMMT55-FMMT55
DC Current Gain hFE Max50 at 10 mA, 10 V-50 at 10 mA at 10 V
Height1.1 mm--
Length3 mm--
PackagingReel-Reel
Width1.4 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 1 A-- 1 A
DC Collector/Base Gain hfe Min50 at 10 mA, 10 V, 50 at 300 mA, 10 V--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Unit Weight0.000282 oz-0.000282 oz
Package Case--SOT-23
Pd Power Dissipation--0.5 W
Collector Emitter Voltage VCEO Max--- 150 V
Collector Base Voltage VCBO--- 160 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--50 at 10 mA at 10 V 50 at 300 mA at 10 V
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
FMMT555TC Bipolar Transistors - BJT PNP Medium Power
FMMT555TA , 1SMA5938BT3 Nuevo y original
FMMT555TC Bipolar Transistors - BJT PNP Medium Powe
FMMT555TA Bipolar Transistors - BJT PNP High Voltage
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