FJV3111

FJV3111RMTF vs FJV3111R vs FJV3111RMTF , 1N5931B

 
PartNumberFJV3111RMTFFJV3111RFJV3111RMTF , 1N5931B
DescriptionBipolar Transistors - Pre-Biased NPN/40V/100mA/22K
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased-
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max40 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation200 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.93 mm--
Length2.92 mm--
TypeNPN Epitaxial Silicon Transistor--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJV3111RMTF Bipolar Transistors - Pre-Biased NPN/40V/100mA/22K
FJV3111R Nuevo y original
FJV3111RMTF , 1N5931B Nuevo y original
ON Semiconductor
ON Semiconductor
FJV3111RMTF TRANS PREBIAS NPN 200MW SOT23-3
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