FJP52

FJP5200OTU vs FJP5200 vs FJP5200R

 
PartNumberFJP5200OTUFJP5200FJP5200R
DescriptionBipolar Transistors - BJT NPN Epitaxial Silicon
ManufacturerON SemiconductorFSCFairchild Semiconductor
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max230 V--
Collector Base Voltage VCBO230 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current15 A-15 A
Gain Bandwidth Product fT30 MHz-30 MHz
Minimum Operating Temperature- 50 C-- 50 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesFJP5200--
DC Current Gain hFE Max80-55
Height9.4 mm--
Length10.67 mm--
PackagingTube-Tube
Width4.83 mm--
BrandON Semiconductor / Fairchild--
DC Collector/Base Gain hfe Min80 at 1 A, 5 V--
Pd Power Dissipation100000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.063493 oz-0.063493 oz
Package Case--TO-220
Pd Power Dissipation--100000 mW
Collector Emitter Voltage VCEO Max--230 V
Collector Base Voltage VCBO--230 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--55 at 1 A at 5 V
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJP5200OTU Bipolar Transistors - BJT NPN Epitaxial Silicon
ON Semiconductor
ON Semiconductor
FJP5200RTU Bipolar Transistors - BJT NPN 230V 15A 80W
FJP5200OTU TRANS NPN 250V 17A TO-220AB
FJP5200 Nuevo y original
FJP5200R Nuevo y original
Top