FJNS3215 stock, FJNS3215, FJNS3215RBU


PartNumber	FJNS3215RBU	FJNS3215RTA
Description	Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 10K	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Y	Y
Configuration	Single	Single
Transistor Polarity	NPN	NPN
Typical Input Resistor	2.2 kOhms	2.2 kOhms
Typical Resistor Ratio	0.22	0.22
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
DC Collector/Base Gain hfe Min	33	33
Collector Emitter Voltage VCEO Max	50 V	50 V
Continuous Collector Current	0.1 A	0.1 A
Peak DC Collector Current	100 mA	100 mA
Pd Power Dissipation	300 mW	300 mW
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Packaging	Bulk	Ammo Pack
DC Current Gain hFE Max	33	33
Emitter Base Voltage VEBO	10 V	10 V
Height	3.7 mm	3.7 mm
Length	4 mm	4 mm
Type	NPN Epitaxial Silicon Transistor	NPN Epitaxial Silicon Transistor
Width	2.31 mm	2.31 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Product Type	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	1000	3000
Subcategory	Transistors	Transistors
Unit Weight	0.006286 oz	0.006286 oz

Search Part Number : "FJNS3215", Match & Start with "FJNS3215" - Total : 5

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	FJNS3215RBU	Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 10K
ON Semiconductor / Fairchild	FJNS3215RTA	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ON Semiconductor	FJNS3215RTA	TRANS PREBIAS NPN 300MW TO92S
ON Semiconductor	FJNS3215RBU	TRANS PREBIAS NPN 300MW TO92S
	FJNS3215-RBU	Nuevo y original

FJNS3215