 | | |
| PartNumber | FJN4312RBU | FJN4312RTA |
| Description | Bipolar Transistors - Pre-Biased PNP/40V/100mA/47K | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Configuration | Single | Single |
| Transistor Polarity | PNP | PNP |
| Typical Input Resistor | 47 kOhms | 47 kOhms |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 Kinked Lead |
| DC Collector/Base Gain hfe Min | 100 | 100 |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V |
| Continuous Collector Current | - 0.1 A | - 0.1 A |
| Peak DC Collector Current | 100 mA | 100 mA |
| Pd Power Dissipation | 300 mW | 300 mW |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Packaging | Bulk | Ammo Pack |
| DC Current Gain hFE Max | 600 | 600 |
| Emitter Base Voltage VEBO | - 5 V | - 5 V |
| Height | 5.33 mm | 5.33 mm |
| Length | 5.2 mm | 5.2 mm |
| Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor |
| Width | 4.19 mm | 4.19 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 1000 | 2000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.006286 oz | 0.010088 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJN4312RBU | Bipolar Transistors - Pre-Biased PNP/40V/100mA/47K | |
| FJN4312RTA | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | ||
ON Semiconductor |
FJN4312RTA | TRANS PREBIAS PNP 300MW TO92-3 | |
| FJN4312RBU | TRANS PREBIAS PNP 300MW TO92-3 | ||
| FJN4312R | Nuevo y original |