FJN4309 stock, FJN4309, FJN4309RBU


PartNumber	FJN4309RBU	FJN4309RTA	FJN4309-RBU
Description	Bipolar Transistors - Pre-Biased PNP/50V/100mA/4.7K	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
Manufacturer	ON Semiconductor	Fairchild Semiconductor	-
Product Category	Bipolar Transistors - Pre-Biased	Transistors (BJT) - Single, Pre-Biased	-
RoHS	Y	-	-
Configuration	Single	Single	-
Transistor Polarity	PNP	PNP	-
Typical Input Resistor	4.7 kOhms	4.7 kOhms	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	-	-
DC Collector/Base Gain hfe Min	100	-	-
Collector Emitter Voltage VCEO Max	40 V	-	-
Continuous Collector Current	- 0.1 A	- 0.1 A	-
Peak DC Collector Current	100 mA	100 mA	-
Pd Power Dissipation	300 mW	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Packaging	Bulk	Ammo Pack	-
DC Current Gain hFE Max	600	-	-
Emitter Base Voltage VEBO	- 5 V	-	-
Height	5.33 mm	-	-
Length	5.2 mm	-	-
Type	PNP Epitaxial Silicon Transistor	-	-
Width	4.19 mm	-	-
Brand	ON Semiconductor / Fairchild	-	-
Product Type	BJTs - Bipolar Transistors - Pre-Biased	-	-
Factory Pack Quantity	1000	-	-
Subcategory	Transistors	-	-
Unit Weight	0.006286 oz	0.008466 oz	-
Package Case	-	TO-92-3 Kinked Lead	-
Pd Power Dissipation	-	0.3 W	-
Collector Emitter Voltage VCEO Max	-	40 V	-
Emitter Base Voltage VEBO	-	- 5 V	-
DC Collector Base Gain hfe Min	-	100	-

Search Part Number : "FJN4309", Match & Start with "FJN4309" - Total : 4

Fabricante	Parte #	Descripción
ON Semiconductor / Fairchild	FJN4309RBU	Bipolar Transistors - Pre-Biased PNP/50V/100mA/4.7K
ON Semiconductor	FJN4309RTA	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor	FJN4309RBU	TRANS PREBIAS PNP 300MW TO92-3
	FJN4309-RBU	Nuevo y original

FJN4309