FJN4306

FJN4306RTA vs FJN4306RBU vs FJN4306R

 
PartNumberFJN4306RTAFJN4306RBUFJN4306R
DescriptionBipolar Transistors - Pre-Biased PNP Si Transistor EpitaxialTRANS PREBIAS PNP 300MW TO92-3
ManufacturerON Semiconductor-FSC
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Single, Pre-Biased
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.21--
Mounting StyleThrough Hole--
Package / CaseTO-92-3 Kinked Lead--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingAmmo Pack--
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO- 10 V--
Height5.33 mm--
Length5.2 mm--
TypePNP Epitaxial Silicon Transistor--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.010088 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJN4306RTA Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
FJN4306RBU TRANS PREBIAS PNP 300MW TO92-3
FJN4306RTA TRANS PREBIAS PNP 300MW TO92-3
FJN4306R Nuevo y original
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