 |  |  | |
| PartNumber | FJN3301RTA | FJN3301 | FJN3301RBU |
| Description | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | TRANS NPN 50V 0.1A TO-92 | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Single | Single | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 Kinked Lead | - | - |
| DC Collector/Base Gain hfe Min | 20 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 300 mW | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FJN3301R | - | - |
| Packaging | Ammo Pack | Cut Tape (CT) Alternate Packaging | - |
| DC Current Gain hFE Max | 20 | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | FJN3301RTA_NL | - | - |
| Unit Weight | 0.008466 oz | 0.008466 oz | - |
| Part Aliases | - | FJN3301RTA_NL | - |
| Package Case | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-92-3 | - |
| Power Max | - | 300mW | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| DC Current Gain hFE Min Ic Vce | - | 20 @ 10mA, 5V | - |
| Vce Saturation Max Ib Ic | - | 300mV @ 500μA, 10mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 250MHz | - |
| Pd Power Dissipation | - | 0.3 W | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Emitter Base Voltage VEBO | - | 10 V | - |
| DC Collector Base Gain hfe Min | - | 20 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJN3301RTA | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | |
ON Semiconductor |
FJN3301RTA | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | |
| FJN3301RBU | TRANS NPN 50V 0.1A TO-92 | ||
| FJN3301 | Nuevo y original |