| PartNumber | FGB20N60SFD-F085 | FGB20N60SFD |
| Description | IGBT Transistors 600V 20A FSP IGBT | IGBT Transistors 600V 20A Field Stop |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | D2PAK-3 | TO-263AB |
| Mounting Style | SMD/SMT | Through Hole |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.4 V | 2.8 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 40 A | 40 A |
| Pd Power Dissipation | 208 W | 83 W |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | FGB20N60S_F085 | FGB20N60SFD |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Continuous Collector Current Ic Max | 20 A | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | 400 nA | 400 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | FGB20N60SFD_F085 | - |
| Unit Weight | 0.046296 oz | 0.046296 oz |