FGA25S

FGA25S125P-SN00337 vs FGA25S125P_SN00337 vs FGA25S125P

 
PartNumberFGA25S125P-SN00337FGA25S125P_SN00337FGA25S125P
DescriptionIGBT Transistors SA2TIGBT TO3PN 25A 1250VIGBT Transistors 1250V 25A FS SA Trench IGBTIGBT Transistors Shorted Anode IGBT
ManufacturerON SemiconductorFairchild SemiconductorFairchild Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-3PN--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1250 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage6 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesFGA25S125P--
PackagingTubeTubeTube
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current500 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesFGA25S125P_SN00337--
Unit Weight0.225789 oz--
Package Case-TO-3P-3, SC-65-3TO-3P-3, SC-65-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-3PNTO-3PN
Power Max-250W250W
Reverse Recovery Time trr---
Current Collector Ic Max-50A50A
Voltage Collector Emitter Breakdown Max-1250V1250V
IGBT Type-Trench Field StopTrench Field Stop
Current Collector Pulsed Icm-75A75A
Vce on Max Vge Ic-2.35V @ 15V, 25A2.35V @ 15V, 25A
Switching Energy-1.09mJ (on), 580μJ (off)1.09mJ (on), 580μJ (off)
Gate Charge-204nC204nC
Td on off 25°C-24ns/502ns24ns/502ns
Test Condition-600V, 25A, 10 Ohm, 15V600V, 25A, 10 Ohm, 15V
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGA25S125P-SN00337 IGBT Transistors SA2TIGBT TO3PN 25A 1250V
FGA25S125P_SN00337 IGBT Transistors 1250V 25A FS SA Trench IGBT
ON Semiconductor
ON Semiconductor
FGA25S125P IGBT Transistors Shorted Anode IGBT
FGA25S125P-SN00337 IGBT 1250V 50A 250W TO-3PN
Top