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| PartNumber | FF600R12ME4EB11BOSA1 | FF600R12ME4P | FF600R12ME4CP_B11 |
| Description | IGBT Modules | IGBT Modules | IGBT Modules |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Common Emitter | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.75 V | - | - |
| Continuous Collector Current at 25 C | 600 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 20 mW | - | - |
| Package / Case | 152 mm x 62.5 mm x 20.5 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | Tray | Tray |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Mounting Style | Press Fit | - | - |
| Maximum Gate Emitter Voltage | 15 V | - | - |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 6 | 6 | 6 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | SP001671626 | FF600R12ME4PBOSA1 SP001102658 | FF600R12ME4CPB11BPSA1 SP001287596 |