FF400R12KE3

FF400R12KE3 vs FF400R12KE3HOSA1 vs FF400R12KE3B2HOSA1

 
PartNumberFF400R12KE3FF400R12KE3HOSA1FF400R12KE3B2HOSA1
DescriptionIGBT Modules 1200V 400A DUAL HALF BRIDGEIGBT MODULE 1200V 400ATrench and Field Stop IGBT4un
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C580 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2 kW--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.9 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF400R12KE3HOSA1 SP000100781--
Unit Weight12 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FF400R12KE3_B2 IGBT Modules N-CH 1.2KV 580A
FF400R12KE3 IGBT Modules 1200V 400A DUAL HALF BRIDGE
FF400R12KE3HOSA1 IGBT MODULE 1200V 400A
FF400R12KE3B2HOSA1 Trench and Field Stop IGBT4un
FF400R12KE3_B2 IGBT Modules N-CH 1.2KV 580A
FF400R12KE3 IGBT Modules 1200V 400A DUAL HALF BRIDGE
FF400R12KE3 FF300R12KE3 Nuevo y original
FF400R12KE3 ENG Nuevo y original
FF400R12KE3-S1 Nuevo y original
FF400R12KE3-S5 Nuevo y original
FF400R12KE3-S6 Nuevo y original
FF400R12KE3_3 Nuevo y original
FF400R12KE3_ B2 Trans IGBT Module N-CH 1.2KV 580A 7-Pin 62MM (Alt: SP000092019)
FF400R12KE3S5HOSA1 Insulated Gate Bipolar Transistor Module
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