FF150R12KE3G

FF150R12KE3G vs FF150R12KE3GHOSA1 vs FF150R12KE3GB2HOSA1

 
PartNumberFF150R12KE3GFF150R12KE3GHOSA1FF150R12KE3GB2HOSA1
DescriptionIGBT Modules 1200V 150A DUALIGBT MODULE VCES 1200V 150AIGBT MODULE VCES 1200V 150A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C225 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation780 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF150R12KE3GHOSA1 SP000100740--
Unit Weight12 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
FF150R12KE3G_B2 IGBT Modules N-CH 1.2KV 225A
FF150R12KE3G IGBT Modules 1200V 150A DUAL
FF150R12KE3GHOSA1 IGBT MODULE VCES 1200V 150A
FF150R12KE3GB2HOSA1 IGBT MODULE VCES 1200V 150A
FF150R12KE3G_B2 IGBT Modules N-CH 1.2KV 225A
FF150R12KE3G IGBT Modules 1200V 150A DUAL
FF150R12KE3G-B2 Nuevo y original
FF150R12KE3GB2 Nuevo y original
FF150R12KE3G_B2,C-SERIE IGBTs (Alt: SP000100759)
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