PartNumber | FF100R12RT4 | FF100R12KS4 | FF100R12KS4HOSA1 |
Description | IGBT Modules IGBT Module w/ IGBT & Diode | IGBT Modules 1200V 100A DUAL | IGBT MODULE VCES 1700V 1000A |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | N | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 2 V | 3.2 V | - |
Gate Emitter Leakage Current | 100 nA | 400 nA | - |
Pd Power Dissipation | 555 W | 780 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 125 C | - |
Packaging | Tray | Tray | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF100R12RT4HOSA1 SP000624754 | FF100R12KS4HOSA1 SP000100705 | - |
Unit Weight | 5.643834 oz | 12 oz | - |
Configuration | - | Dual | - |
Continuous Collector Current at 25 C | - | 150 A | - |
Package / Case | - | 62 mm | - |
Height | - | 30.5 mm | - |
Length | - | 106.4 mm | - |
Width | - | 61.4 mm | - |
Mounting Style | - | Chassis Mount | - |