FDWS863

FDWS86368-F085 vs FDWS86369-F085 vs FDWS86380-F085

 
PartNumberFDWS86368-F085FDWS86369-F085FDWS86380-F085
DescriptionMOSFET 80V N-Chnl Power Trench MOSFETMOSFET 80V N Chnl Power Trench MOSFETMOSFET MV7 N Channel Power Trench MosFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-56-8Power-56-8Power-56-8
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenamePowerTrenchPowerTrench-
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length6 mm6 mm-
SeriesFDWS86368_F085FDWS86369_F085-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesFDWS86368_F085FDWS86369_F085FDWS86380_F085
Unit Weight0.006095 oz0.006095 oz0.006095 oz
Number of Channels--1 Channel
Transistor Polarity--N-Channel
Vds Drain Source Breakdown Voltage--80 V
Id Continuous Drain Current--50 A
Rds On Drain Source Resistance--11.3 mOhms
Vgs th Gate Source Threshold Voltage--2 V
Vgs Gate Source Voltage--20 V
Qg Gate Charge--30 nC
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 175 C
Pd Power Dissipation--75 W
Configuration--Single
Channel Mode--Enhancement
Transistor Type--1 N-Channel
Fall Time--5 ns
Rise Time--8 ns
Typical Turn Off Delay Time--15 ns
Typical Turn On Delay Time--13 ns
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDWS86368-F085 MOSFET 80V N-Chnl Power Trench MOSFET
FDWS86369-F085 MOSFET 80V N Chnl Power Trench MOSFET
FDWS86380-F085 MOSFET MV7 N Channel Power Trench MosFET
ON Semiconductor
ON Semiconductor
FDWS86368-F085 MOSFET NCH 80V 80A POWER56
FDWS86369-F085 MOSFET NCH 80V 65A POWER56
FDWS86380-F085 MOSFET N-CH 80V 50A POWER56
FDWS86368_F085 N-CHANNEL POWERTRENCH MOSFET
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